Leakage Current Stability Analysis for Subthreshold SRAM
نویسندگان
چکیده
Low-power memories typically operate in the subthreshold region of device; however, as supply voltage continues to decrease, impact leakage current on SRAM stability becomes more significant. The traditional method measuring static noise tolerance only considers effect voltage, and measurement results are not accurate enough. Therefore, this paper proposes a leakage-current-based analysis that provides better metrics, reads (RINM) writes (WINM) measure SRAMs. Both currents voltages were taken into account. demonstrate is than conventional under levels.
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ژورنال
عنوان ژورنال: Electronics
سال: 2022
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics11081196